TY - GEN
T1 - Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation
AU - Yan, Jiwang
AU - Muto, Seiya
AU - Kuriyagawa, Tsunemoto
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.
AB - Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.
KW - Nd:YAG laser
KW - Single crystal silicon
KW - Subsurface damage
KW - Ultraprecision grinding
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U2 - 10.4028/www.scientific.net/AMR.76-78.451
DO - 10.4028/www.scientific.net/AMR.76-78.451
M3 - Conference contribution
AN - SCOPUS:73949136119
SN - 087849314X
SN - 9780878493142
T3 - Advanced Materials Research
SP - 451
EP - 456
BT - Advances in Abrasive Technology XII
T2 - 12th International Symposium on Advances in Abrasive Technology, ISAAT2009
Y2 - 27 September 2009 through 30 September 2009
ER -