Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation

Jiwang Yan; Seiya Muto; Tsunemoto Kuriyagawa

doi:10.4028/www.scientific.net/AMR.76-78.451

Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation

Jiwang Yan, Seiya Muto, Tsunemoto Kuriyagawa

MEN - Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

Original language	English
Title of host publication	Advances in Abrasive Technology XII
Pages	451-456
Number of pages	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.76-78.451
Publication status	Published - 2009
Event	12th International Symposium on Advances in Abrasive Technology, ISAAT2009 - Gold Coast, QLD, Australia Duration: 2009 Sep 27 → 2009 Sep 30

Publication series

Name	Advanced Materials Research
Volume	76-78
ISSN (Print)	1022-6680

Other

Other	12th International Symposium on Advances in Abrasive Technology, ISAAT2009
Country	Australia
City	Gold Coast, QLD
Period	09/9/27 → 09/9/30

Keywords

Nd:YAG laser
Single crystal silicon
Subsurface damage
Ultraprecision grinding

ASJC Scopus subject areas

Engineering(all)

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Yan, J, Muto, S & Kuriyagawa, T 2009, Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. in Advances in Abrasive Technology XII. Advanced Materials Research, vol. 76-78, pp. 451-456, 12th International Symposium on Advances in Abrasive Technology, ISAAT2009, Gold Coast, QLD, Australia, 09/9/27. https://doi.org/10.4028/www.scientific.net/AMR.76-78.451

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abstract = "Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.",

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AU - Yan, Jiwang

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AU - Kuriyagawa, Tsunemoto

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N2 - Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

AB - Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

KW - Nd:YAG laser

KW - Single crystal silicon

KW - Subsurface damage

KW - Ultraprecision grinding

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