PROCESS TECHNOLOGIES FOR HIGH DENSITY, HIGH SPEED 16 MEGABIT DYNAMIC RAM.

F. Horiguchi; A. Nitayama; K. Hieda; T. Hamamoto; K. Tsuda; K. Sunouchi; N. Takenouchi; S. Aritome; H. Takato; M. Kimura; K. Yamabe; M. Nakase; Y. Kamata; F. Masuoka

doi:10.1109/iedm.1987.191422

PROCESS TECHNOLOGIES FOR HIGH DENSITY, HIGH SPEED 16 MEGABIT DYNAMIC RAM.

F. Horiguchi, A. Nitayama, K. Hieda, T. Hamamoto, K. Tsuda, K. Sunouchi, N. Takenouchi, S. Aritome, H. Takato, M. Kimura, K. Yamabe, M. Nakase, Y. Kamata, F. Masuoka

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Key points of submicrometer CMOS technologies for fabrication of an experimental 16-Mb DRAM (dynamic random-access memory) are discussed. The memory cell and the transistor designs are most important to realize high-density, high-speed DRAMs. The main features of the technology are a buried stacked capacitor cell and a high speed CMOS structure. The lithographic levels used for critical layers were 0. 7 mu m. The technologies have been verified using test vehicles and an experimental 16-Mb DRAM.

Original language	English
Pages (from-to)	324-327
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1987.191422
Publication status	Published - 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/iedm.1987.191422

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Horiguchi, F., Nitayama, A., Hieda, K., Hamamoto, T., Tsuda, K., Sunouchi, K., Takenouchi, N., Aritome, S., Takato, H., Kimura, M., Yamabe, K., Nakase, M., Kamata, Y., & Masuoka, F. (1987). PROCESS TECHNOLOGIES FOR HIGH DENSITY, HIGH SPEED 16 MEGABIT DYNAMIC RAM. Technical Digest - International Electron Devices Meeting, 324-327. https://doi.org/10.1109/iedm.1987.191422

PROCESS TECHNOLOGIES FOR HIGH DENSITY, HIGH SPEED 16 MEGABIT DYNAMIC RAM. / Horiguchi, F.; Nitayama, A.; Hieda, K.; Hamamoto, T.; Tsuda, K.; Sunouchi, K.; Takenouchi, N.; Aritome, S.; Takato, H.; Kimura, M.; Yamabe, K.; Nakase, M.; Kamata, Y.; Masuoka, F.

In: Technical Digest - International Electron Devices Meeting, 1987, p. 324-327.

Research output: Contribution to journal › Conference article › peer-review

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AU - Hamamoto, T.

AU - Tsuda, K.

AU - Sunouchi, K.

AU - Takenouchi, N.

AU - Aritome, S.

AU - Takato, H.

AU - Kimura, M.

AU - Yamabe, K.

AU - Nakase, M.

AU - Kamata, Y.

AU - Masuoka, F.

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