Process requirements for continued scaling semiconductor devices - The needs for controlling both number and position of impurity atoms

Takahiro Shinada, Tomonori Kurosawa, Takahiro Kobayashi, Hideki Nakayama, En I. Syu, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)". This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages448-449
Number of pages2
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/TerritoryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Process requirements for continued scaling semiconductor devices - The needs for controlling both number and position of impurity atoms'. Together they form a unique fingerprint.

Cite this