Process performance of hydrogen-terminated silicon surface

Jun Takano; Masakazu Nakamura; Akinobu Teramoto; Takashi Imaoka; Masahiko Kogure; Tadahiro Ohmi

Process performance of hydrogen-terminated silicon surface

Jun Takano, Masakazu Nakamura, Akinobu Teramoto, Takashi Imaoka, Masahiko Kogure, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

Abstract

The authors show that the smoothness of the Si surface is significantly affected by electric characteristics of a device. A technology is introduced to cover the Si(111) surface with mono hydride.

Original language	English
Pages	199-223
Number of pages	25
Publication status	Published - 1992 Dec 1
Event	Conference on Semiconductor Pure Water and Chemicals - Santa Clara, CA, USA Duration: 1992 Feb 11 → 1992 Feb 13

Other

Other	Conference on Semiconductor Pure Water and Chemicals
City	Santa Clara, CA, USA
Period	92/2/11 → 92/2/13

ASJC Scopus subject areas

Water Science and Technology
Electronic, Optical and Magnetic Materials

Cite this

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title = "Process performance of hydrogen-terminated silicon surface",

abstract = "The authors show that the smoothness of the Si surface is significantly affected by electric characteristics of a device. A technology is introduced to cover the Si(111) surface with mono hydride.",

author = "Jun Takano and Masakazu Nakamura and Akinobu Teramoto and Takashi Imaoka and Masahiko Kogure and Tadahiro Ohmi",

year = "1992",

month = dec,

day = "1",

language = "English",

pages = "199--223",

note = "Conference on Semiconductor Pure Water and Chemicals ; Conference date: 11-02-1992 Through 13-02-1992",

}

TY - CONF

T1 - Process performance of hydrogen-terminated silicon surface

AU - Takano, Jun

AU - Nakamura, Masakazu

AU - Teramoto, Akinobu

AU - Imaoka, Takashi

AU - Kogure, Masahiko

AU - Ohmi, Tadahiro

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The authors show that the smoothness of the Si surface is significantly affected by electric characteristics of a device. A technology is introduced to cover the Si(111) surface with mono hydride.

AB - The authors show that the smoothness of the Si surface is significantly affected by electric characteristics of a device. A technology is introduced to cover the Si(111) surface with mono hydride.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026985108&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0026985108

SP - 199

EP - 223

T2 - Conference on Semiconductor Pure Water and Chemicals

Y2 - 11 February 1992 through 13 February 1992

ER -

Process performance of hydrogen-terminated silicon surface

Abstract

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ASJC Scopus subject areas

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