Process design for Co(W) alloy films as a single layered barrier/liner layer for 14nm generation Cu-interconnect

Hideharu Shimizu, Akihito Kumamoto, Kohei Shima, Yudai Suzuki, Takeshi Momose, Yukihiro Shimogaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CVD or ALD-Co(W): Potential single-layered barrier/liner Amidinate, BTBMW, and NH3 were the most suitable for Co(W). ALD may be better than CVD to form Co(W) from amidinates. SPEC derived from precursor - Lower resistivity (60-100 μΩ-cm) - W segregation → stuffing barrier - Film-available by reaction with NH3 Confirmed SPEC of Co(W) - Good step coverage - Pass BTS-TVS barrier exam. - Adhesion with Cu.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2012
Pages103-108
Number of pages6
Publication statusPublished - 2012 Dec 1
Externally publishedYes
EventAdvanced Metallization Conference 2012 - Albany, NY, United States
Duration: 2012 Oct 92012 Oct 11

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2012
CountryUnited States
CityAlbany, NY
Period12/10/912/10/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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