TY - GEN
T1 - Process design for Co(W) alloy films as a single layered barrier/liner layer for 14nm generation Cu-interconnect
AU - Shimizu, Hideharu
AU - Kumamoto, Akihito
AU - Shima, Kohei
AU - Suzuki, Yudai
AU - Momose, Takeshi
AU - Shimogaki, Yukihiro
PY - 2012/12/1
Y1 - 2012/12/1
N2 - CVD or ALD-Co(W): Potential single-layered barrier/liner Amidinate, BTBMW, and NH3 were the most suitable for Co(W). ALD may be better than CVD to form Co(W) from amidinates. SPEC derived from precursor - Lower resistivity (60-100 μΩ-cm) - W segregation → stuffing barrier - Film-available by reaction with NH3 Confirmed SPEC of Co(W) - Good step coverage - Pass BTS-TVS barrier exam. - Adhesion with Cu.
AB - CVD or ALD-Co(W): Potential single-layered barrier/liner Amidinate, BTBMW, and NH3 were the most suitable for Co(W). ALD may be better than CVD to form Co(W) from amidinates. SPEC derived from precursor - Lower resistivity (60-100 μΩ-cm) - W segregation → stuffing barrier - Film-available by reaction with NH3 Confirmed SPEC of Co(W) - Good step coverage - Pass BTS-TVS barrier exam. - Adhesion with Cu.
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M3 - Conference contribution
AN - SCOPUS:84878089984
SN - 9781622769995
T3 - Advanced Metallization Conference (AMC)
SP - 103
EP - 108
BT - Advanced Metallization Conference 2012
T2 - Advanced Metallization Conference 2012
Y2 - 9 October 2012 through 11 October 2012
ER -