Abstract
A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.
Original language | English |
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Pages (from-to) | 21-28 |
Number of pages | 8 |
Journal | Integrated Ferroelectrics |
Volume | 16 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry