Abstract
A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.
| Original language | English |
|---|---|
| Pages (from-to) | 21-28 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 16 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1997 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Torii, K., Kawakami, H., Miki, H., Kushida, K., Itoga, T., Goto, Y., Kumihashi, T., Yokoyama, N., Moniwa, M., Shoji, K., Kaga, T., & Fujisaki, Y. (1997). Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors. Integrated Ferroelectrics, 16(1-4), 21-28. https://doi.org/10.1080/10584589708013026