Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors

K. Torii, H. Kawakami, H. Miki, K. Kushida, T. Itoga, Y. Goto, T. Kumihashi, N. Yokoyama, M. Moniwa, K. Shoji, T. Kaga, Y. Fujisaki

    Research output: Contribution to journalArticle

    20 Citations (Scopus)


    A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

    Original languageEnglish
    Pages (from-to)21-28
    Number of pages8
    JournalIntegrated Ferroelectrics
    Issue number1-4
    Publication statusPublished - 1997 Jan 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Control and Systems Engineering
    • Ceramics and Composites
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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    Torii, K., Kawakami, H., Miki, H., Kushida, K., Itoga, T., Goto, Y., Kumihashi, T., Yokoyama, N., Moniwa, M., Shoji, K., Kaga, T., & Fujisaki, Y. (1997). Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors. Integrated Ferroelectrics, 16(1-4), 21-28.