Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors

K. Torii; H. Kawakami; H. Miki; K. Kushida; T. Itoga; Y. Goto; T. Kumihashi; N. Yokoyama; M. Moniwa; K. Shoji; T. Kaga; Y. Fujisaki

doi:10.1080/10584589708013026

Process and properties of Pt/Pb(Zr,Ti)O₃/Pt integrated ferroelectric capacitors

K. Torii, H. Kawakami, H. Miki, K. Kushida, T. Itoga, Y. Goto, T. Kumihashi, N. Yokoyama, M. Moniwa, K. Shoji, T. Kaga, Y. Fujisaki

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

Original language	English
Pages (from-to)	21-28
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	16
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708013026
Publication status	Published - 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589708013026

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title = "Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors",

abstract = "A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.",

author = "K. Torii and H. Kawakami and H. Miki and K. Kushida and T. Itoga and Y. Goto and T. Kumihashi and N. Yokoyama and M. Moniwa and K. Shoji and T. Kaga and Y. Fujisaki",

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T1 - Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors

AU - Torii, K.

AU - Kawakami, H.

AU - Miki, H.

AU - Kushida, K.

AU - Itoga, T.

AU - Goto, Y.

AU - Kumihashi, T.

AU - Yokoyama, N.

AU - Moniwa, M.

AU - Shoji, K.

AU - Kaga, T.

AU - Fujisaki, Y.

PY - 1997

Y1 - 1997

N2 - A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

AB - A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

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JF - Integrated Ferroelectrics

SN - 1058-4587

IS - 1-4

ER -

Process and properties of Pt/Pb(Zr,Ti)O₃/Pt integrated ferroelectric capacitors

Abstract

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