Process and properties of Pt/Pb(Zr,Ti)O3/Pt integrated ferroelectric capacitors

K. Torii, H. Kawakami, H. Miki, K. Kushida, T. Itoga, Y. Goto, T. Kumihashi, N. Yokoyama, M. Moniwa, K. Shoji, T. Kaga, Y. Fujisaki

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)


    A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

    Original languageEnglish
    Pages (from-to)21-28
    Number of pages8
    JournalIntegrated Ferroelectrics
    Issue number1-4
    Publication statusPublished - 1997

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Control and Systems Engineering
    • Ceramics and Composites
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry


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