Probing strain modulation in a gate-defined one-dimensional electron system

M. H. Fauzi, M. F. Sahdan, M. Takahashi, A. Basak, K. Sato, K. Nagase, B. Muralidharan, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Gate patterning on semiconductors is routinely used to electrostatically restrict electron movement into reduced dimensions. At cryogenic temperatures, where most studies are carried out, differential thermal contraction between the patterned gate and the semiconductor often lead to an appreciable strain modulation. The impact of such modulated strain to the conductive channel buried in a semiconductor has long been recognized, but measuring its magnitude and variation are rather challenging. Here we present a way to measure that modulation in a gate-defined GaAs-based one-dimensional channel by applying resistively detected NMR with in situ electrons coupled to quadrupole nuclei. The detected strain magnitude, deduced from the quadrupole-split resonance, varies spatially on the order of 10-4, which is consistent with the predicted variation based on an elastic strain model. We estimate the initial lateral strain ϵXX and ϵyy developed at the interface to be about 5.0×10-3.

Original languageEnglish
Article number241301
JournalPhysical Review B
Volume100
Issue number24
DOIs
Publication statusPublished - 2019 Dec 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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