Probing shallow electron traps in cerium-doped Gd3Al2Ga3O12 scintillators by UV-induced absorption spectroscopy

Mamoru Kitaura, Kei Kamada, Shunsuke Kurosawa, Junpei Azuma, Akimasa Ohnishi, Akihiro Yamaji, Kazuhiko Hara

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21 Citations (Scopus)


From measuring absorption spectra of cerium-doped Gd3Al2Ga3O12 (Ce:GAGG) and undoped GAGG crystals at low temperatures under UV-light irradiation, we find that they exhibit a broad band at around 12000 cm%1. This band is enhanced by high-temperature annealing under a hydrogen atmosphere. On the basis of present experimental results, the UV-induced band is assigned to shallow electron traps of defect complexes associated with oxygen vacancies. The UV-induced band completely disappears with Mg2+ codoping. We conclude that the Mg2+ codoping has the effect of inhibiting the formation of shallow electron traps, which realizes a faster scintillation response of Ce:GAGG.

Original languageEnglish
Article number072602
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2016 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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