Pristine semiconducting [110] silicon nanowires

Abhishek Kumar Singh, Vijay Kumar, Ryunosuke Note, Yoshiyuki Kawazoe

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

We report results of ab initio calculations on silicon nanowires oriented along the [110] direction and show for the first time that these pristine silicon nanowires are indirect band gap semiconductors. The nanowires have bulk Si core and are bounded by two (100) and two (110) planes in lateral directions. The (100) planes are atomically reconstructed with dimerization in a manner similar to the (100) surface of bulk Si but the dimer arrays are perpendicular to each other on the two (100) planes. An interesting consequence of surface reconstruction is the possibility of polytypism in thicker nanowires. We discuss its effects on the electronic structure. These findings could have important implications for the use of silicon nanowires in nanoscale devices as experimentally [110] nanowires have been found to grow preferentially in the small diameter range.

Original languageEnglish
Pages (from-to)2302-2305
Number of pages4
JournalNano Letters
Volume5
Issue number11
DOIs
Publication statusPublished - 2005 Nov 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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