Printing sub-100 nanometer features near-field photolithography

Shuji Tanaka; Masayuki Nakao; Yotaro Hatamura; Masanori Komuro; Hiroshi Hiroshima; Masahiro Hatakeyama

doi:10.1143/jjap.37.6739

Printing sub-100 nanometer features near-field photolithography

Shuji Tanaka, Masayuki Nakao, Yotaro Hatamura, Masanori Komuro, Hiroshi Hiroshima, Masahiro Hatakeyama

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100nm features on a commercially available photoresist using 442-nm-wavelength light.

Original language	English
Pages (from-to)	6739-6744
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.37.6739
Publication status	Published - 1998
Externally published	Yes

Keywords

Evanescent light
High resolution
Optical near-field
Photolithography
Replication

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.6739

Cite this

Printing sub-100 nanometer features near-field photolithography. / Tanaka, Shuji; Nakao, Masayuki; Hatamura, Yotaro; Komuro, Masanori; Hiroshima, Hiroshi; Hatakeyama, Masahiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 12 B, 1998, p. 6739-6744.

Research output: Contribution to journal › Article › peer-review

@article{85fb0f4c645d4f098993e484e8ce5fe8,

title = "Printing sub-100 nanometer features near-field photolithography",

abstract = "In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100nm features on a commercially available photoresist using 442-nm-wavelength light.",

keywords = "Evanescent light, High resolution, Optical near-field, Photolithography, Replication",

author = "Shuji Tanaka and Masayuki Nakao and Yotaro Hatamura and Masanori Komuro and Hiroshi Hiroshima and Masahiro Hatakeyama",

year = "1998",

doi = "10.1143/jjap.37.6739",

language = "English",

volume = "37",

pages = "6739--6744",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 B",

}

TY - JOUR

T1 - Printing sub-100 nanometer features near-field photolithography

AU - Tanaka, Shuji

AU - Nakao, Masayuki

AU - Hatamura, Yotaro

AU - Komuro, Masanori

AU - Hiroshima, Hiroshi

AU - Hatakeyama, Masahiro

PY - 1998

Y1 - 1998

N2 - In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100nm features on a commercially available photoresist using 442-nm-wavelength light.

AB - In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100nm features on a commercially available photoresist using 442-nm-wavelength light.

KW - Evanescent light

KW - High resolution

KW - Optical near-field

KW - Photolithography

KW - Replication

UR - http://www.scopus.com/inward/record.url?scp=0004673962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004673962&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.6739

DO - 10.1143/jjap.37.6739

M3 - Article

AN - SCOPUS:0004673962

VL - 37

SP - 6739

EP - 6744

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 B

ER -

Printing sub-100 nanometer features near-field photolithography

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this