Pressure-induced polymorphic transformation in single-crystal Si

Mingwei Chen

    Research output: Contribution to journalArticle

    Abstract

    Pressure-induced phase transformations in lightly and heavily B-doped Si wafers subjected to nanoindentation tests have been studied using Raman microspectroscopy. The effects of load levels and loading/unloading rates on the phase transformations were systematically investigated, and resultant phase transformation maps were plotted. For heavily B-doped Si, the regions in which the resulted phases are amorphous Si, and amorphous Si mixed with Si-III and Si-XII enlarge to a wider range, suggesting that heavy B doping promotes the amorphization of Si. Preliminary analysis of phase transformation kinetics indicates that the polymorphic transformation may not be accomplished by long-range or short-range diffusion, instead, just via interfacial atom rearrangement.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalCailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment
    Volume26
    Issue number3
    Publication statusPublished - 2005 Jun 1

    Keywords

    • Nanoindentation
    • Phase transformation
    • Raman microspectroscopy
    • Silicon

    ASJC Scopus subject areas

    • Materials Science(all)
    • Physics and Astronomy(all)

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