Pressure-induced metal-insulator transition in spinel compound CuV2S4

H. Okada; K. Koyama; M. Hedo; Y. Uwatoko; K. Watanabe

doi:10.1016/j.physb.2007.10.215

Pressure-induced metal-insulator transition in spinel compound CuV₂S₄

H. Okada, K. Koyama, M. Hedo, Y. Uwatoko, K. Watanabe

High Field Laboratory for Superconducting Materials

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In order to investigate the pressure effect on electrical properties of CuV₂S₄, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV₂S₄ at 8 GPa.

Original language	English
Pages (from-to)	1612-1613
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	403
Issue number	5-9
DOIs	https://doi.org/10.1016/j.physb.2007.10.215
Publication status	Published - 2008 Apr 1

Keywords

Charge density wave
CuVS
Electrical resistivity
High pressure
Spinel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2007.10.215

Cite this

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abstract = "In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.",

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AU - Okada, H.

AU - Koyama, K.

AU - Hedo, M.

AU - Uwatoko, Y.

AU - Watanabe, K.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

AB - In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

KW - Charge density wave

KW - CuVS

KW - Electrical resistivity

KW - High pressure

KW - Spinel

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