Pressure-induced metal-insulator transition in spinel compound CuV2S4

H. Okada, K. Koyama, M. Hedo, Y. Uwatoko, K. Watanabe

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

Original languageEnglish
Pages (from-to)1612-1613
Number of pages2
JournalPhysica B: Condensed Matter
Volume403
Issue number5-9
DOIs
Publication statusPublished - 2008 Apr 1

Keywords

  • Charge density wave
  • CuVS
  • Electrical resistivity
  • High pressure
  • Spinel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Okada, H., Koyama, K., Hedo, M., Uwatoko, Y., & Watanabe, K. (2008). Pressure-induced metal-insulator transition in spinel compound CuV2S4. Physica B: Condensed Matter, 403(5-9), 1612-1613. https://doi.org/10.1016/j.physb.2007.10.215