Pressure-induced metal-insulator transition in spinel compound CuV2S4

H. Okada; K. Koyama; M. Hedo; Y. Uwatoko; K. Watanabe

doi:10.1016/j.physb.2007.10.215

Pressure-induced metal-insulator transition in spinel compound CuV₂S₄

H. Okada, K. Koyama, M. Hedo, Y. Uwatoko, K. Watanabe

High Field Laboratory for Superconducting Materials

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In order to investigate the pressure effect on electrical properties of CuV₂S₄, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV₂S₄ at 8 GPa.

Original language	English
Pages (from-to)	1612-1613
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	403
Issue number	5-9
DOIs	https://doi.org/10.1016/j.physb.2007.10.215
Publication status	Published - 2008 Apr 1

Keywords

Charge density wave
CuVS
Electrical resistivity
High pressure
Spinel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2007.10.215

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Okada, H., Koyama, K., Hedo, M., Uwatoko, Y., & Watanabe, K. (2008). Pressure-induced metal-insulator transition in spinel compound CuV₂S₄. Physica B: Condensed Matter, 403(5-9), 1612-1613. https://doi.org/10.1016/j.physb.2007.10.215

@article{5841a137fc784c518f1404a7f0acb3a5,

title = "Pressure-induced metal-insulator transition in spinel compound CuV2S4",

abstract = "In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.",

keywords = "Charge density wave, CuVS, Electrical resistivity, High pressure, Spinel",

author = "H. Okada and K. Koyama and M. Hedo and Y. Uwatoko and K. Watanabe",

year = "2008",

month = apr,

day = "1",

doi = "10.1016/j.physb.2007.10.215",

language = "English",

volume = "403",

pages = "1612--1613",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "5-9",

}

TY - JOUR

T1 - Pressure-induced metal-insulator transition in spinel compound CuV2S4

AU - Okada, H.

AU - Koyama, K.

AU - Hedo, M.

AU - Uwatoko, Y.

AU - Watanabe, K.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

AB - In order to investigate the pressure effect on electrical properties of CuV2S4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV2S4 at 8 GPa.

KW - Charge density wave

KW - CuVS

KW - Electrical resistivity

KW - High pressure

KW - Spinel

UR - http://www.scopus.com/inward/record.url?scp=39749134187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39749134187&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2007.10.215

DO - 10.1016/j.physb.2007.10.215

M3 - Article

AN - SCOPUS:39749134187

VL - 403

SP - 1612

EP - 1613

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 5-9

ER -