Pressure Effect on Yb4As3 and Its Related Compounds

H. Aoki, H. Kobayashi, T. Kamimura, T. Suzuki, A. Ochiai, Y. Seino, H. Takahashi, N. Takeshita, N. Môri

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Transport properties of P-andSb-doped Yb4As3 were measured. The electrical resistivity measurement ofYb4(As0.88Sb0.12)3 under various pressure up to 8 GPa was performed. These results were compared with that of pure Yb4As3 under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole, [pressure effect, Yb4As3, Yb4(As1-xSbx)3, Yb4(As1-x-Px)3.

Original languageEnglish
Pages (from-to)605-607
Number of pages3
JournalReview of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
Volume7
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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