Transport properties of P-andSb-doped Yb4As3 were measured. The electrical resistivity measurement ofYb4(As0.88Sb0.12)3 under various pressure up to 8 GPa was performed. These results were compared with that of pure Yb4As3 under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole, [pressure effect, Yb4As3, Yb4(As1-xSbx)3, Yb4(As1-x-Px)3.
|Number of pages||3|
|Journal||Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu|
|Publication status||Published - 1998|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics