Pressure dependence of the SDW transition in (TMTTF)2Br

A. Ishikawa, N. Matsunaga, K. Nomura, T. Nakamura, T. Takahashi, G. Saito

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the pressure dependence of the resistivity in (TMTTF)2Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of TSDW is consistent with the prediction of the mean field theory.

Original languageEnglish
Pages (from-to)905-906
Number of pages2
JournalSynthetic Metals
Volume120
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 15

Keywords

  • Metal-insulator phase transitions
  • Organic conductors
  • Transport measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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