Pressure dependence of the SDW transition in (TMTTF)2Br

A. Ishikawa; N. Matsunaga; K. Nomura; T. Nakamura; T. Takahashi; G. Saito

doi:10.1016/S0379-6779(00)00970-X

Pressure dependence of the SDW transition in (TMTTF)₂Br

A. Ishikawa, N. Matsunaga, K. Nomura, T. Nakamura, T. Takahashi, G. Saito

SCI - Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the pressure dependence of the resistivity in (TMTTF)₂Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of T_SDW is consistent with the prediction of the mean field theory.

Original language	English
Pages (from-to)	905-906
Number of pages	2
Journal	Synthetic Metals
Volume	120
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00970-X
Publication status	Published - 2001 Mar 15

Keywords

Metal-insulator phase transitions
Organic conductors
Transport measurements

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Pressure dependence of the SDW transition in (TMTTF)2Br",

abstract = "We investigated the pressure dependence of the resistivity in (TMTTF)2Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of TSDW is consistent with the prediction of the mean field theory.",

keywords = "Metal-insulator phase transitions, Organic conductors, Transport measurements",

author = "A. Ishikawa and N. Matsunaga and K. Nomura and T. Nakamura and T. Takahashi and G. Saito",

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T1 - Pressure dependence of the SDW transition in (TMTTF)2Br

AU - Ishikawa, A.

AU - Matsunaga, N.

AU - Nomura, K.

AU - Nakamura, T.

AU - Takahashi, T.

AU - Saito, G.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - We investigated the pressure dependence of the resistivity in (TMTTF)2Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of TSDW is consistent with the prediction of the mean field theory.

AB - We investigated the pressure dependence of the resistivity in (TMTTF)2Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of TSDW is consistent with the prediction of the mean field theory.

KW - Metal-insulator phase transitions

KW - Organic conductors

KW - Transport measurements

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