TY - JOUR
T1 - Pressure coefficients of the light emission in cubic InGaN epilayers and cubic InGaN/GaN quantum wells
AU - Suski, Tadek
AU - Teisseyre, H.
AU - Łepkowski, S. P.
AU - Perlin, P.
AU - Kitamura, T.
AU - Ishida, Y.
AU - Okumura, H.
AU - Chichibu, Shigefusa
PY - 2002/12/1
Y1 - 2002/12/1
N2 - We have studied influence of hydrostatic pressure on the light emission from cubic InGaN/GaN quantum wells (QWs) and cubic InGaN thick epilayers. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN QWs was found. Cubic samples revealed magnitude of dEE/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed a drastic drop of dEE/dP with increasing QW width. This different behavior of two types of QWs is explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs, we use a simple k · p model based on the linear theory of elasticity. To reproduce the experimental data it is necessary to invoke presence of In-rich fluctuations in the studied samples. In contrast to QWs, thick epilayers of cubic InGaN exhibit the anomalously small dEE/dP. We suggest mechanisms causing likely this effect.
AB - We have studied influence of hydrostatic pressure on the light emission from cubic InGaN/GaN quantum wells (QWs) and cubic InGaN thick epilayers. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN QWs was found. Cubic samples revealed magnitude of dEE/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed a drastic drop of dEE/dP with increasing QW width. This different behavior of two types of QWs is explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs, we use a simple k · p model based on the linear theory of elasticity. To reproduce the experimental data it is necessary to invoke presence of In-rich fluctuations in the studied samples. In contrast to QWs, thick epilayers of cubic InGaN exhibit the anomalously small dEE/dP. We suggest mechanisms causing likely this effect.
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U2 - 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L
DO - 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L
M3 - Article
AN - SCOPUS:0036920591
VL - 234
SP - 759
EP - 763
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 3
ER -