Pressure and temperature dependences of the electronic structure of CeIrSi3 probed by resonant X-ray emission spectroscopy

Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Akio Kotani, Jung Fu Lin, Fuminori Honda, Rikio Settai, Yoshichika Onuki, Nozumu Hiraoka, Hirofumi Ishii, Ku Ding Tsuei

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce L3 edge. Ce is in a weakly mixed valence state at ambient pressure, mostly f1 with a small contribution from the f0 component. Pressure-induced increase of the Ce valence becomes apparent above 4 GPa, concomitantly with the disappearance of the superconductivity. No temperature dependence of the Ce valence is observed within the measured temperature range down to 24 K.

Original languageEnglish
Article number124701
Journaljournal of the physical society of japan
Volume80
Issue number12
DOIs
Publication statusPublished - 2011 Dec
Externally publishedYes

Keywords

  • Ce
  • Electronic structure
  • High pressure
  • Superconductivity
  • X-ray emission spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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