Present and future of high-speed compound semiconductor IC's

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

This paper describes state-of-the-art of high-speed electronic device and IC technologies for very high-speed lightwave communications systems. The technology of interest is for over 40-Gbit/s transmitter and receiver operations. Device technology including Si-Ge, GaAs-based, and InP-based heterostructure transistors as well as circuit design technology including analog/digital/mixed-signal and optoelectronic IC's are reviewed. The speed limiting factors are discussed to address the future trends toward 100 Gbit/s and beyond.

Original languageEnglish
Pages (from-to)1-25
Number of pages25
JournalInternational Journal of High Speed Electronics and Systems
Volume13
Issue number1
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

Keywords

  • Compound semiconductor
  • HBT
  • HEMT
  • IC
  • Lightwave communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Present and future of high-speed compound semiconductor IC's'. Together they form a unique fingerprint.

Cite this