Abstract
Rare-earth silicon carbonitrides, Y2 Si4 N6 C and Y2 Si4 N6 C: M3+ (M=Ce,Tb), were prepared by a carbothermal reduction and nitridation method. The crystal structure of Y2 Si4 N6 C was determined by Rietveld refinement using the atomic coordinates of Ho2 Si4 N6 C as a starting model. The host lattice was isostructural with Ho2 Si4 N6 C of monoclinic system [P 21 c, a=5.9295 (1), b=9.8957 (1), c=11.8800 (2) Å, Β=119.63 (4) °, and Z=4]. The photoluminescence properties of doped materials, Y2 Si4 N6 C: Ce3+ and Y2 Si4 N6 C: Tb3+, were characterized on the basis of the detailed structural analysis result.
Original language | English |
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Pages (from-to) | H151-H154 |
Journal | Journal of the Electrochemical Society |
Volume | 153 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2006 Jul |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry