Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer

Masanobu Aizawa, Chihiro Kobayashi, Hisanori Yamane, Toshio Hirai

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Abstract

Zirconium oxide films were prepared at 600° to 1000 °C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650 °C was amorphous. The films deposited at 850° and 1000 °C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000 °C.

Original languageEnglish
Pages (from-to)233-235
Number of pages3
JournalJournal of the Ceramic Society of Japan. International ed.
Volume101
Issue number2
Publication statusPublished - 1993 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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