Abstract
Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.
Original language | English |
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Pages (from-to) | 237-239 |
Number of pages | 3 |
Journal | Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan |
Volume | 101 |
Issue number | 1170 |
DOIs | |
Publication status | Published - 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry