Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer

Masanobu Aizawa; Chihiro Kobayashi; Hisanori Yamane; Toshio Hirai

doi:10.2109/jcersj.101.237

Preparation of ZrO₂ thin films by CVD using H₂-CO₂ as oxidizer

Masanobu Aizawa, Chihiro Kobayashi, Hisanori Yamane, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H₂ and CO₂ as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO₂, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.

Original language	English
Pages (from-to)	237-239
Number of pages	3
Journal	Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume	101
Issue number	1170
DOIs	https://doi.org/10.2109/jcersj.101.237
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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@article{fc8fcebb7ab244bfa1378fa4b2361b99,

title = "Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer",

abstract = "Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.",

author = "Masanobu Aizawa and Chihiro Kobayashi and Hisanori Yamane and Toshio Hirai",

year = "1993",

doi = "10.2109/jcersj.101.237",

language = "English",

volume = "101",

pages = "237--239",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1170",

}

TY - JOUR

T1 - Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer

AU - Aizawa, Masanobu

AU - Kobayashi, Chihiro

AU - Yamane, Hisanori

AU - Hirai, Toshio

PY - 1993

Y1 - 1993

N2 - Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.

AB - Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.

UR - http://www.scopus.com/inward/record.url?scp=0027539949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027539949&partnerID=8YFLogxK

U2 - 10.2109/jcersj.101.237

DO - 10.2109/jcersj.101.237

M3 - Article

AN - SCOPUS:0027539949

VL - 101

SP - 237

EP - 239

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 1170

ER -

Preparation of ZrO₂ thin films by CVD using H₂-CO₂ as oxidizer

Abstract

ASJC Scopus subject areas

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