Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer

Masanobu Aizawa, Chihiro Kobayashi, Hisanori Yamane, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.

Original languageEnglish
Pages (from-to)237-239
Number of pages3
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume101
Issue number1170
DOIs
Publication statusPublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Preparation of ZrO<sub>2</sub> thin films by CVD using H<sub>2</sub>-CO<sub>2</sub> as oxidizer'. Together they form a unique fingerprint.

Cite this