Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

Joon Woo Bae, Jae Won Lim, Sun Joong Kim, Kouji Mimura, Takamichi Miyazaki, Masahito Uchikoshi, Minoru Isshiki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZrO2 dielectric layers were prepared by a two-step process, a deposition of pure Zr film with and without a negative substrate bias voltage and a subsequent oxidation of the Zr films. We focused on the effect of the negative substrate bias voltage on the Zr film deposition and the subsequent oxidation of the Zr films. As a result, the Zr film deposited at the substrate bias voltage of -50 V (Vs = -50 V) was found to have a high intensity peak of Zr (100) and a uniform and smooth surface. From the capacitance-voltage and currentvoltage measurements of the ZrO2 films, a high dielectric constant of 21 and the equivalent oxide thickness (EOT) of 2.6 nm were obtained on the oxidation layer of the Zr film deposited at Vs = -50 V. On the other hand, a low dielectric constant of 15 and the EOT of 3.6 nm was obtained on that of the Zr film deposited at Vs = 0 V. The leakage current density of the ZrO2 film (Vs = -50 V) was 5.69×10-4 A/cm 2 , and this value was much lower than the 1.21×10-4 A/cm2 for the ZrO2 film (Vs = 0 V). It was found that the two-step process by subsequent oxidation after film deposition using a negative substrate bias voltage is useful for obtaining high-quality dielectric layers.

Original languageEnglish
Pages (from-to)447-452
Number of pages6
JournalMetals and Materials International
Volume16
Issue number3
DOIs
Publication statusPublished - 2010 Jun 1

Keywords

  • Dielectrics
  • Electrical properties
  • Ion beam processing
  • Oxidation
  • Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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