Preparation of turbostratic and cubic boron-nitride films by electron-cyclotron-resonance, plasma-assisted, chemical vapour deposition

T. Goto, T. Tanaka, H. Masumoto, T. Hirai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Boron-nitride films were prepared on single-crystal silicon substrates by electron-cyclotron-resonance (ECR) plasma-assisted, chemical vapour deposition (CVD), using B2H6 and nitrogen as the source gases, without intentional heating of the substrate. Turbostratic boron-nitride (t-BN) films were obtained at a maximum deposition rate of 1.8 nms-1. A cubic boron nitride (c-BN) phase formed in the t-BN films after application of a radio-frequency (r.f.) bias to the substrates at a voltage of 156-172 V and at a maximum deposition rate of 0.08 nms-1.

Original languageEnglish
Pages (from-to)324-328
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume5
Issue number6
DOIs
Publication statusPublished - 1994 Dec

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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