Preparation of titanium carbide plates by chemical vapour deposition

Charon Cherng Jiang, Takashi Goto, Toshio Hirai

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14 Citations (Scopus)


Thick titanium carbide (TiCx) plates were prepared by chemical vapour deposition using TiCl4, CCl4 and H2 as source gases at deposition temperatures (Tdep) of 1573 to 1873 K, total gas pressures (Ptot) of 4 and 40 kPa, and source gas molar ratio (CCl4/(TiCl4 + CCl4)) (mc) of 0.13 to 0.91. A plate-like TiCx was obtained at mc less than 0.5. The (110) plane was preferably oriented parallel to the deposition surface at Tdep of 1673 to 1873 K. The deposition rates showed a strong mc dependence and the maximum rate was found at mc = 0.3 to 0.5. The activation energies for the formation of TiCx plates were 86 kJ mol-1 at Ptot = 4 kPa and 95 kJ mol-1 at Ptot = 40 kPa. When mc values were in the range of 0.13 to 0.51, the lattice parameter increased with an increase in mc and decreased with an increase in Tdep. The lattice parameter was almost constant beyond mc = 0.72 at all Tdep. The atomic ratio (C to Ti) for TiCx varied from 0.6 to 1.0 with deposition conditions.

Original languageEnglish
Pages (from-to)1086-1093
Number of pages8
JournalJournal of Materials Science
Issue number2 A
Publication statusPublished - 1990 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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