Preparation of TiO₂ thick film by laser chemical vapor deposition method

A TiO₂ film was prepared on Pt/Ti/SiO₂/Si substrate by a laser chemical vapor deposition method. The rutile TiO₂ film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (R_dep = 11.4 μm h^-1). At 300 K and 1 MHz, the dielectric constant (ε_r) and loss (tanδ) of the TiO₂ film were about 73.0 and 0.0069, respectively. The electrical properties of TiO₂ film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10 ²-10⁷ Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO₂ film was dominated by the oxygen vacancies.