Preparation of TiO2 thick film by laser chemical vapor deposition method

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (Rdep = 11.4 μm h-1). At 300 K and 1 MHz, the dielectric constant (εr) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10 2-107 Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.

Original languageEnglish
Pages (from-to)1758-1763
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number6
Publication statusPublished - 2013 Jun

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Preparation of TiO2 thick film by laser chemical vapor deposition method'. Together they form a unique fingerprint.

Cite this