TY - JOUR
T1 - Preparation of TiO2 thick film by laser chemical vapor deposition method
AU - Guo, Dongyun
AU - Ito, Akihiko
AU - Goto, Takashi
AU - Tu, Rong
AU - Wang, Chuanbin
AU - Shen, Qiang
AU - Zhang, Lianmeng
N1 - Funding Information:
Acknowledgments This work was supported in part by Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).
PY - 2013/6
Y1 - 2013/6
N2 - A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (Rdep = 11.4 μm h-1). At 300 K and 1 MHz, the dielectric constant (εr) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10 2-107 Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.
AB - A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (Rdep = 11.4 μm h-1). At 300 K and 1 MHz, the dielectric constant (εr) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10 2-107 Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.
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U2 - 10.1007/s10854-012-1008-y
DO - 10.1007/s10854-012-1008-y
M3 - Article
AN - SCOPUS:84878687188
VL - 24
SP - 1758
EP - 1763
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 6
ER -