Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method

Dongyun Guo; Akihiko Ito; Takashi Goto; Rong Tu; Chuanbin Wang; Qiang Shen; Lianmeng Zhang

doi:10.1007/s40145-013-0057-x

Preparation of TiO₂-rich Ba-Ti-O thick films by laser chemical vapor deposition method

Dongyun Guo, Akihiko Ito, Takashi Goto, Rong Tu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

TiO₂-rich Ba-Ti-O films were prepared on Pt/Ti/SiO₂/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi₂O₅, Ba₄Ti₁₃O₃₀ and BaTi₅O₁₁ films were prepared at Ti/Ba molar ratios m_Ti/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO₂-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi₂O₅ film (prepared at m_Ti/Ba = 1.84 and deposition temperature T_dep = 877 K), Ba₄Ti₁₃O₃₀ film (prepared at m_Ti/Ba = 2.83 and T_dep = 914 K) and BaTi₅O₁₁ film (prepared at m_Ti/Ba = 4.49 and T_dep = 955 K) were 50, 40 and 21, respectively.

Original language	English
Pages (from-to)	167-172
Number of pages	6
Journal	Journal of Advanced Ceramics
Volume	2
Issue number	2
DOIs	https://doi.org/10.1007/s40145-013-0057-x
Publication status	Published - 2013 Jun 1

Keywords

TiO-rich Ba-Ti-O film
deposition temperature
dielectric properties
laser chemical vapor deposition (LCVD)
microstructure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites

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@article{886d5ebc0c814c52afe84cfc96be42bc,

title = "Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method",

abstract = "TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.",

keywords = "TiO-rich Ba-Ti-O film, deposition temperature, dielectric properties, laser chemical vapor deposition (LCVD), microstructure",

author = "Dongyun Guo and Akihiko Ito and Takashi Goto and Rong Tu and Chuanbin Wang and Qiang Shen and Lianmeng Zhang",

note = "Funding Information: This work was supported in part by the Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).",

year = "2013",

month = jun,

day = "1",

doi = "10.1007/s40145-013-0057-x",

language = "English",

volume = "2",

pages = "167--172",

journal = "Journal of Advanced Ceramics",

issn = "2226-4108",

publisher = "Springer Science + Business Media",

number = "2",

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TY - JOUR

T1 - Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method

AU - Guo, Dongyun

AU - Ito, Akihiko

AU - Goto, Takashi

AU - Tu, Rong

AU - Wang, Chuanbin

AU - Shen, Qiang

AU - Zhang, Lianmeng

N1 - Funding Information: This work was supported in part by the Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).

PY - 2013/6/1

Y1 - 2013/6/1

N2 - TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.

AB - TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.

KW - TiO-rich Ba-Ti-O film

KW - deposition temperature

KW - dielectric properties

KW - laser chemical vapor deposition (LCVD)

KW - microstructure

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