TY - JOUR
T1 - Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor
AU - You, Yu
AU - Ito, Akihiko
AU - Tu, Rong
AU - Goto, Takashi
N1 - Funding Information:
This study was supported in part by the Global COE Program of Materials Integration, Tohoku University . It was also performed as part of the Rare Metal Substitute Materials Development Project of the New Energy and Industrial Technology Development Organization (NEDO) . This research was also supported in part by the Japan Society for the Promotion of Science , Grant-in-Aid for Young Scientists (B), no. 22760550 , and by the Ministry of Education, Science, Sports and Culture , Grant-in-Aid for Scientific Research (A), No. 22246082 .
PY - 2013
Y1 - 2013
N2 - Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047 K showed an epitaxial relation as (0001)AlN//(0001)Al2O3, [11-20]AlN//[10-10]Al2O3 . The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature.
AB - Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047 K showed an epitaxial relation as (0001)AlN//(0001)Al2O3, [11-20]AlN//[10-10]Al2O3 . The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature.
KW - A3. Epitaxial growth
KW - A3. Laser chemical vapor deposition
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2012.12.034
DO - 10.1016/j.jcrysgro.2012.12.034
M3 - Article
AN - SCOPUS:84888368721
VL - 365
SP - 1
EP - 5
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -