Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047 K showed an epitaxial relation as (0001)AlN//(0001)Al2O3, [11-20]AlN//[10-10]Al2O3 . The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Crystal Growth
Volume365
DOIs
Publication statusPublished - 2013 Jan 1

Keywords

  • A3. Epitaxial growth
  • A3. Laser chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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