Preparation of Ta-N and Ti-N thin films as a capping layer of COFEB/MGO magnetic tunnel junctions

Atsushi Sugihara, Soichiro Osaki, Ryoichi Nakatani

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    We investigated the compatibility of Ta-N and Ti-N thin films as a capping layer of CoFeB/MgO magnetic tunnel junctions on the basis of their resistivity, crystal structure, thermal stability and absorbability of boron. Ta-N and Ti-N thin films were prepared on MgO (001)/CoFeB structure by reactive sputtering using a gas mixture of Ar and N2 with varying N2 percentage (fN2). It was found that Ti-N prepared at fN2 = 30% had a resistivity of 220 μΩ cm, a nanocrystalline structure, a high thermal stability and good absorbability of boron compared with conventional Ta. These results suggest that Ti-N has potential as a novel capping material for CoFeB/MgO magnetic tunnel junctions.

    Original languageEnglish
    Pages (from-to)398-401
    Number of pages4
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume77
    Issue number9
    DOIs
    Publication statusPublished - 2013 Sep 1

    Keywords

    • Cobalt iron boron alloy
    • Cobalt-iron-boron/ manganese oxide magnetic tunnel junction
    • Magnetic tunnel junction
    • Tantalum
    • Tantalum nitride
    • Titanium nitride

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Mechanics of Materials
    • Metals and Alloys
    • Materials Chemistry

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