Preparation of stoichiometric TiNx films by laser CVD with metalorganic precursor

Yan Sheng Gong, Wei Zhou, Rong Tu, Takashi Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nearly stoichiometric TiNx films were deposited on Al 2O3 substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNx films. Single phase of TiNx films with columnar cross section were obtained. The ratio of N to Ti in TiNx films increased with increasing PL and was close to stoichiometric at PL > 150 W. The deposition rate of TiNx films with a depositing area of 300 mm2 was about 18-90 μm/h, which decreased with increasing PL and Tpre.

Original languageEnglish
Title of host publicationAdvanced Materials
Pages318-321
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011 - Changsha, China
Duration: 2011 May 282011 May 30

Publication series

NameAdvanced Materials Research
Volume239-242
ISSN (Print)1022-6680

Other

Other2011 International Conference on Chemical Engineering and Advanced Materials, CEAM 2011
CountryChina
CityChangsha
Period11/5/2811/5/30

Keywords

  • Composition
  • Laser CVD
  • Stoichiometric
  • TDEAT-NH
  • TiN films

ASJC Scopus subject areas

  • Engineering(all)

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