Preparation of silicon oxycarbide films by laser ablation of SiO/3C-SiC multicomponent targets

C. B. Wang, T. Goto, R. Tu, L. M. Zhang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Amorphous silicon oxycarbide (SiOC) films were prepared on Si (1 0 0) substrates by laser ablation at 773 K using mixed targets with different ratios of SiO to 3C-SiC. The structure and composition of the as-deposited films as a function of target content were investigated. With increasing the SiO content in the targets, the contents of Si-C and Si-O-C bonds decreased while that of Si-O bond increased. The mixing ratio of the targets had a dominant effect on the film composition and the stoichiometry of silicon oxycarbide films could be controlled by varying the mixing ratio of the targets.

Original languageEnglish
Pages (from-to)1703-1706
Number of pages4
JournalApplied Surface Science
Volume257
Issue number5
DOIs
Publication statusPublished - 2010 Dec 15

Keywords

  • Laser ablation
  • Multicomponent targets
  • SiOC films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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