Silicon carbide (SiC; beta -type) plates were prepared by a chemical vapor deposition technique using SiCl//4, C//3H//8 and H//2 as source gases under the following conditions: deposition temperature (T//d//e//p): 1300 degree -1800 degree C; total gas pressure (P//t//o//t): 30 approx. 760 Torr; and C//3H//8 gas flow rate left bracket FR(C//3H//8) right bracket : 10 approx. 90 cm**3/min. The effects of FR(C//3H//8) on the carbon content, density, crystal structure, surface morphology and deposition rate of the deposits were investigated. beta -SiC plates were obtained at FR(C//3H//8) between 10 and 40 cm**3/min under the above given T//d//e//p-P//t//o//t conditions. The density and carbon content of the beta -SiC plates were about 3. 2 g/cm**3 and 30 wt%, respectively, in agreement with the theoretical values. The surface morphology of the beta -SiC plates was faceted pyramid-like at low P//t//o//t and cone-like at high P//t//o//t.
|Number of pages||8|
|Journal||Yogyo Kyokai Shi/Journal of the Ceramic Society of Japan|
|Publication status||Published - 1983 Nov 1|
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