Preparation of SiCp/Cu composites by Ti-activated pressureless infiltration

Lin ZHANG, Xuan hui QU, Bo hua DUAN, Xin bo HE, Ming li QIN, Xin LU

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Sessile drop technique was used to investigate the influence of Ti on the wetting behaviour of copper alloy on SiC substrate. A low contact angle of 15° for Cu alloy on SiC substrate is obtained at the temperature of 1 100 °C. The interfacial energy is lowered by the segregation of Ti and the formation of reaction product TiC, resulting in the significant enhancement of wettability. Ti is found to almost completely segregate to Cu/SiC interface. This agrees well with a coverage of 99.8%Ti at the Cu/SiC interface predicted from a simple model based on Gibbs adsorption isotherm. SiCp/Cu composites are produced by pressureless infiltration of copper alloy into Ti-activated SiC preform. The volume fraction of SiC reaches 57%. The densification achieves 97.5%. The bending strength varies from 150 MPa to 250 MPa and increases with decreasing particle size.

Original languageEnglish
Pages (from-to)872-878
Number of pages7
JournalTransactions of Nonferrous Metals Society of China (English Edition)
Issue number4
Publication statusPublished - 2008 Aug
Externally publishedYes


  • SiC/Cu composites
  • mechanical property
  • metal matrix composites
  • pressureless infiltration
  • wettability

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Geotechnical Engineering and Engineering Geology
  • Metals and Alloys
  • Materials Chemistry


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