Preparation of rutile and anatase TiO2 films by MOCVD

Rong Tu; Takashi Goto

doi:10.4028/0-87849-960-1.1219

Preparation of rutile and anatase TiO₂ films by MOCVD

Rong Tu, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Titanium dioxide (TiO₂) films were prepared on quartz substrates by using Ti(O-i-C₃H₇)₂(dpm)₂ and O₂ gas. The crystal structure, morphology and deposition rate of TiO₂ films were investigated by changing deposition temperatures (T_deP) from 700 to 1100 K and total pressures (P_tot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO₂ films with (200) orientation and anatase TiO₂ films with (004) orientation both in a single phase were obtained at T_dep = 873 K and 723 K, respectively. At T_dep > 873 K, the TiO ₂ films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At T_dep = 723 to 873 K, the TiO ₂ films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO₂ films increased with increasing T_dep showing the maximum of 30 μm h^-1 at T_dep = 973 K and P _tot = 0.6 kPa.

Original language	English
Pages (from-to)	1219-1222
Number of pages	4
Journal	Materials Science Forum
Volume	475-479
Issue number	II
DOIs	https://doi.org/10.4028/0-87849-960-1.1219
Publication status	Published - 2005 Jan 1
Event	PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2004 Nov 2 → 2004 Nov 5

Keywords

Anatase
Deposition rate
MOCVD
Morphology
Rutile
Titanium dioxide film

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-960-1.1219

Cite this

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title = "Preparation of rutile and anatase TiO2 films by MOCVD",

abstract = "Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)2(dpm)2 and O2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (TdeP) from 700 to 1100 K and total pressures (Ptot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at Tdep = 873 K and 723 K, respectively. At Tdep > 873 K, the TiO 2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At Tdep = 723 to 873 K, the TiO 2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing Tdep showing the maximum of 30 μm h-1 at Tdep = 973 K and P tot = 0.6 kPa.",

keywords = "Anatase, Deposition rate, MOCVD, Morphology, Rutile, Titanium dioxide film",

author = "Rong Tu and Takashi Goto",

year = "2005",

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T1 - Preparation of rutile and anatase TiO2 films by MOCVD

AU - Tu, Rong

AU - Goto, Takashi

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)2(dpm)2 and O2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (TdeP) from 700 to 1100 K and total pressures (Ptot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at Tdep = 873 K and 723 K, respectively. At Tdep > 873 K, the TiO 2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At Tdep = 723 to 873 K, the TiO 2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing Tdep showing the maximum of 30 μm h-1 at Tdep = 973 K and P tot = 0.6 kPa.

AB - Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)2(dpm)2 and O2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (TdeP) from 700 to 1100 K and total pressures (Ptot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at Tdep = 873 K and 723 K, respectively. At Tdep > 873 K, the TiO 2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At Tdep = 723 to 873 K, the TiO 2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing Tdep showing the maximum of 30 μm h-1 at Tdep = 973 K and P tot = 0.6 kPa.

KW - Anatase

KW - Deposition rate

KW - MOCVD

KW - Morphology

KW - Rutile

KW - Titanium dioxide film

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