Preparation of rutile and anatase TiO2 films by MOCVD

Rong Tu, Takashi Goto

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)2(dpm)2 and O2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (TdeP) from 700 to 1100 K and total pressures (Ptot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at Tdep = 873 K and 723 K, respectively. At Tdep > 873 K, the TiO 2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At Tdep = 723 to 873 K, the TiO 2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing Tdep showing the maximum of 30 μm h-1 at Tdep = 973 K and P tot = 0.6 kPa.

Original languageEnglish
Pages (from-to)1219-1222
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberII
DOIs
Publication statusPublished - 2005 Jan 1
EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
Duration: 2004 Nov 22004 Nov 5

Keywords

  • Anatase
  • Deposition rate
  • MOCVD
  • Morphology
  • Rutile
  • Titanium dioxide film

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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