Preparation of PZT films derived by hybrid processing for MEMS application

Li Jun Yan, Zhan Jie Wang, Hiroyuki Kokawa, Ryutaro Maeda

Research output: Contribution to journalConference articlepeer-review


Pb(Zr0.52Ti0.45)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P r = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.

Original languageEnglish
Pages (from-to)414-421
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2004 Jun 1
EventDevice and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12


  • Ferroelectric properties
  • Hybrid processing
  • Lead zirconate titanate (PZT)
  • Microstructure
  • Pulsed laser deposition
  • Sol-gel method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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