Preparation of PZT films derived by hybrid processing for MEMS application

Li Jun Yan; Zhan Jie Wang; Hiroyuki Kokawa; Ryutaro Maeda

doi:10.1117/12.522807

Preparation of PZT films derived by hybrid processing for MEMS application

Li Jun Yan, Zhan Jie Wang, Hiroyuki Kokawa, Ryutaro Maeda

ENG - Materials Processing

Research output: Contribution to journal › Conference article › peer-review

Abstract

Pb(Zr_0.52Ti_0.45)O₃ (PZT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P _r = 23.6 μC/cm², and coercive field E_c = 54.8 kV/cm.

Original language	English
Pages (from-to)	414-421
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5276
DOIs	https://doi.org/10.1117/12.522807
Publication status	Published - 2004 Jun 1
Event	Device and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12

Keywords

Ferroelectric properties
Hybrid processing
Lead zirconate titanate (PZT)
Microstructure
Pulsed laser deposition
Sol-gel method

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.522807

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title = "Preparation of PZT films derived by hybrid processing for MEMS application",

abstract = "Pb(Zr0.52Ti0.45)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P r = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.",

keywords = "Ferroelectric properties, Hybrid processing, Lead zirconate titanate (PZT), Microstructure, Pulsed laser deposition, Sol-gel method",

author = "Yan, {Li Jun} and Wang, {Zhan Jie} and Hiroyuki Kokawa and Ryutaro Maeda",

year = "2004",

month = jun,

day = "1",

doi = "10.1117/12.522807",

language = "English",

volume = "5276",

pages = "414--421",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Device and Process Technologies for MEMS, Microelectronics, and Photonics III ; Conference date: 10-12-2003 Through 12-12-2003",

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TY - JOUR

T1 - Preparation of PZT films derived by hybrid processing for MEMS application

AU - Yan, Li Jun

AU - Wang, Zhan Jie

AU - Kokawa, Hiroyuki

AU - Maeda, Ryutaro

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Pb(Zr0.52Ti0.45)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P r = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.

AB - Pb(Zr0.52Ti0.45)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P r = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.

KW - Ferroelectric properties

KW - Hybrid processing

KW - Lead zirconate titanate (PZT)

KW - Microstructure

KW - Pulsed laser deposition

KW - Sol-gel method

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DO - 10.1117/12.522807

M3 - Conference article

AN - SCOPUS:2442436575

VL - 5276

SP - 414

EP - 421

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Device and Process Technologies for MEMS, Microelectronics, and Photonics III

Y2 - 10 December 2003 through 12 December 2003

ER -

Preparation of PZT films derived by hybrid processing for MEMS application

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