Abstract
Pb(Zr0.52Ti0.45)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no sharp interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P r = 23.6 μC/cm2, and coercive field Ec = 54.8 kV/cm.
Original language | English |
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Pages (from-to) | 414-421 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5276 |
DOIs | |
Publication status | Published - 2004 Jun 1 |
Event | Device and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12 |
Keywords
- Ferroelectric properties
- Hybrid processing
- Lead zirconate titanate (PZT)
- Microstructure
- Pulsed laser deposition
- Sol-gel method
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering