PbTiO3 was deposited on a (110) sapphire substrate by chemical vapor deposition using PbO and titanium tetra-i-propoxide (Ti[OCH(CH3)2]4: TTIP). PbO and TTIP vapors generated at 1110°-1270°C and 64°-174°C respectively were transported to a substrate with carrier gases of Ar (350 ml/min) and O2 (350 ml/min). One-phase PbTiO3 was obtained at substrate temperatures (Ts) from 600° to 1150°C. Morphology of PbTiO3 formed on the substrate was fine particle (Ts=600°-800°C), large particle (800°-1100°C) and platelet (1100°-1150°C). Good adhesion was observed between the deposit and the substrate above Ts=800°C. The platelets had crystalline preferred orientation. The crystallographic plane parallel to substrate changed from (111) to (100) and (001) with increasing TTIP evaporation temperature.
|Number of pages||4|
|Journal||Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan|
|Publication status||Published - 1988|
ASJC Scopus subject areas
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry