Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

Cheng Xin Wang; Chun Xiao Gao; Tie Chen Zhang; Hong Wu Liu; Xun Li; Yong Hao Han; Ji Feng Luo; Cai Xia Shen

doi:10.1088/0256-307X/19/10/334

Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

Cheng Xin Wang, Chun Xiao Gao, Tie Chen Zhang, Hong Wu Liu, Xun Li, Yong Hao Han, Ji Feng Luo, Cai Xia Shen

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 10⁵, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

Original language	English
Pages (from-to)	1513-1515
Number of pages	3
Journal	Chinese Physics Letters
Volume	19
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/19/10/334
Publication status	Published - 2002 Oct 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/0256-307X/19/10/334

Cite this

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title = "Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN",

abstract = "A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.",

author = "Wang, {Cheng Xin} and Gao, {Chun Xiao} and Zhang, {Tie Chen} and Liu, {Hong Wu} and Xun Li and Han, {Yong Hao} and Luo, {Ji Feng} and Shen, {Cai Xia}",

year = "2002",

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doi = "10.1088/0256-307X/19/10/334",

language = "English",

volume = "19",

pages = "1513--1515",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

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TY - JOUR

T1 - Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

AU - Wang, Cheng Xin

AU - Gao, Chun Xiao

AU - Zhang, Tie Chen

AU - Liu, Hong Wu

AU - Li, Xun

AU - Han, Yong Hao

AU - Luo, Ji Feng

AU - Shen, Cai Xia

PY - 2002/10/1

Y1 - 2002/10/1

N2 - A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

AB - A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

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U2 - 10.1088/0256-307X/19/10/334

DO - 10.1088/0256-307X/19/10/334

M3 - Article

AN - SCOPUS:0036796758

VL - 19

SP - 1513

EP - 1515

JO - Chinese Physics Letters

JF - Chinese Physics Letters

SN - 0256-307X

IS - 10

ER -

Preparation of p-n junction diode by B-doped diamond film grown on Si-doped c-BN

Abstract

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