Abstract
A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heretojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.
Original language | English |
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Pages (from-to) | 1513-1515 |
Number of pages | 3 |
Journal | Chinese Physics Letters |
Volume | 19 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2002 Oct 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)