Preparation of ohmic n-type cubic boron nitride contacts

Chengxin Wang, Hongwu Liu, Xun Li, Tiechen Zhang, Yonghao Han, Jifeng Luo, Caixia Shen, Chunxiao Gao, Guangtian Zou

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulk crystals were fabricated by utilizing a covering technique, depositing Ti(10 nm)/Mo/(20 nm)/Pt-Au(200 nm) ohmic contact metal on both the sides of the c-BN substrates. The size of the specimen electrode was 100 × 100 μm2 on one side and 300 × 300 μm2 on the other side. Measurements on the specimen were made using a specially made device. Linear current-voltage characteristics were obtained. It is considered that the contact between the Ti- and Si-doped c-BN was ohmic.

Original languageEnglish
Pages (from-to)10937-10940
Number of pages4
JournalJournal of Physics Condensed Matter
Issue number44 SPEC ISS.
Publication statusPublished - 2002 Nov 11
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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