Preparation of Na-Al-O films by laser chemical vapor deposition

Chen Chi; Hirokazu Katsui; Takashi Goto

doi:10.1016/j.matchemphys.2015.05.024

Preparation of Na-Al-O films by laser chemical vapor deposition

Chen Chi, Hirokazu Katsui, Takashi Goto

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (T_dep) of 940-1250 K, molar ratios of Na to Al precursors (R_Na/Al) of 0.2-3 and total pressures (P_tot) of 100-800 Pa. Single-phase NaAlO₂ films were deposited at T_dep = 940-1080 K, R_Na/Al = 1.5-3 and P_tot = 100-800 Pa. The (110)-oriented γ-NaAlO₂ films showed roof-like grains, whereas the (200)-oriented γ-NaAlO₂ films had finely faceted grains. Single-phase NaAl₆O_9.5 formed at T_dep = 1018-1125 K, R_Na/Al = 0.4-3.0 and P_tot = 100-600 Pa NaAl₆O_9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At T_dep > 1100 K, α-Al₂O₃ films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h^-1 for the γ-NaAlO₂ film at T_dep = 986 K, R_Na/Al = 3.0 and P_tot = 200 Pa.

Original language	English
Pages (from-to)	456-460
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	160
DOIs	https://doi.org/10.1016/j.matchemphys.2015.05.024
Publication status	Published - 2015 Jun 15

Keywords

Chemical vapour deposition (CVD)
Inorganic compounds
Microstructure
Surfaces
Thin films

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "Preparation of Na-Al-O films by laser chemical vapor deposition",

abstract = "Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 940-1250 K, molar ratios of Na to Al precursors (RNa/Al) of 0.2-3 and total pressures (Ptot) of 100-800 Pa. Single-phase NaAlO2 films were deposited at Tdep = 940-1080 K, RNa/Al = 1.5-3 and Ptot = 100-800 Pa. The (110)-oriented γ-NaAlO2 films showed roof-like grains, whereas the (200)-oriented γ-NaAlO2 films had finely faceted grains. Single-phase NaAl6O9.5 formed at Tdep = 1018-1125 K, RNa/Al = 0.4-3.0 and Ptot = 100-600 Pa NaAl6O9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At Tdep > 1100 K, α-Al2O3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h-1 for the γ-NaAlO2 film at Tdep = 986 K, RNa/Al = 3.0 and Ptot = 200 Pa.",

keywords = "Chemical vapour deposition (CVD), Inorganic compounds, Microstructure, Surfaces, Thin films",

author = "Chen Chi and Hirokazu Katsui and Takashi Goto",

year = "2015",

month = jun,

day = "15",

doi = "10.1016/j.matchemphys.2015.05.024",

language = "English",

volume = "160",

pages = "456--460",

journal = "Materials Chemistry and Physics",

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TY - JOUR

T1 - Preparation of Na-Al-O films by laser chemical vapor deposition

AU - Chi, Chen

AU - Katsui, Hirokazu

AU - Goto, Takashi

PY - 2015/6/15

Y1 - 2015/6/15

N2 - Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 940-1250 K, molar ratios of Na to Al precursors (RNa/Al) of 0.2-3 and total pressures (Ptot) of 100-800 Pa. Single-phase NaAlO2 films were deposited at Tdep = 940-1080 K, RNa/Al = 1.5-3 and Ptot = 100-800 Pa. The (110)-oriented γ-NaAlO2 films showed roof-like grains, whereas the (200)-oriented γ-NaAlO2 films had finely faceted grains. Single-phase NaAl6O9.5 formed at Tdep = 1018-1125 K, RNa/Al = 0.4-3.0 and Ptot = 100-600 Pa NaAl6O9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At Tdep > 1100 K, α-Al2O3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h-1 for the γ-NaAlO2 film at Tdep = 986 K, RNa/Al = 3.0 and Ptot = 200 Pa.

AB - Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 940-1250 K, molar ratios of Na to Al precursors (RNa/Al) of 0.2-3 and total pressures (Ptot) of 100-800 Pa. Single-phase NaAlO2 films were deposited at Tdep = 940-1080 K, RNa/Al = 1.5-3 and Ptot = 100-800 Pa. The (110)-oriented γ-NaAlO2 films showed roof-like grains, whereas the (200)-oriented γ-NaAlO2 films had finely faceted grains. Single-phase NaAl6O9.5 formed at Tdep = 1018-1125 K, RNa/Al = 0.4-3.0 and Ptot = 100-600 Pa NaAl6O9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At Tdep > 1100 K, α-Al2O3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h-1 for the γ-NaAlO2 film at Tdep = 986 K, RNa/Al = 3.0 and Ptot = 200 Pa.

KW - Chemical vapour deposition (CVD)

KW - Inorganic compounds

KW - Microstructure

KW - Surfaces

KW - Thin films

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