TY - JOUR
T1 - Preparation of Na-Al-O films by laser chemical vapor deposition
AU - Chi, Chen
AU - Katsui, Hirokazu
AU - Goto, Takashi
N1 - Funding Information:
This study was supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), a Grant-in-Aid for Challenging Exploratory Research No. 26560235 , the ARCMG–IMR cooperative program (No. 14G0402 ) of Tohoku University, the China Scholarship Council and the 111 Project (B13035) of China.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/6/15
Y1 - 2015/6/15
N2 - Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 940-1250 K, molar ratios of Na to Al precursors (RNa/Al) of 0.2-3 and total pressures (Ptot) of 100-800 Pa. Single-phase NaAlO2 films were deposited at Tdep = 940-1080 K, RNa/Al = 1.5-3 and Ptot = 100-800 Pa. The (110)-oriented γ-NaAlO2 films showed roof-like grains, whereas the (200)-oriented γ-NaAlO2 films had finely faceted grains. Single-phase NaAl6O9.5 formed at Tdep = 1018-1125 K, RNa/Al = 0.4-3.0 and Ptot = 100-600 Pa NaAl6O9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At Tdep > 1100 K, α-Al2O3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h-1 for the γ-NaAlO2 film at Tdep = 986 K, RNa/Al = 3.0 and Ptot = 200 Pa.
AB - Na-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 940-1250 K, molar ratios of Na to Al precursors (RNa/Al) of 0.2-3 and total pressures (Ptot) of 100-800 Pa. Single-phase NaAlO2 films were deposited at Tdep = 940-1080 K, RNa/Al = 1.5-3 and Ptot = 100-800 Pa. The (110)-oriented γ-NaAlO2 films showed roof-like grains, whereas the (200)-oriented γ-NaAlO2 films had finely faceted grains. Single-phase NaAl6O9.5 formed at Tdep = 1018-1125 K, RNa/Al = 0.4-3.0 and Ptot = 100-600 Pa NaAl6O9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At Tdep > 1100 K, α-Al2O3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 μm h-1 for the γ-NaAlO2 film at Tdep = 986 K, RNa/Al = 3.0 and Ptot = 200 Pa.
KW - Chemical vapour deposition (CVD)
KW - Inorganic compounds
KW - Microstructure
KW - Surfaces
KW - Thin films
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U2 - 10.1016/j.matchemphys.2015.05.024
DO - 10.1016/j.matchemphys.2015.05.024
M3 - Article
AN - SCOPUS:84929966407
VL - 160
SP - 456
EP - 460
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
ER -