Preparation of multiferroic Bi0.85Nd0.15FeO3 thin films by sol-gel method

Dong Yun Guo, Chao Li, Chuan Bin Wang, Qiang Shen, Lian Meng Zhang, Rong Tu, Goto Takashi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method. The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450°C. The single-phase Bi0.85Nd0.15FeO3 films were obtained, when they were annealed at 500-600°C. Bi0.85Nd0.15FeO3 films annealed at 600°C had saturated magnetization about 44.8 emu/cm3, remnant polarization (2 Pr) about 16.6 μC/cm2, dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.

Original languageEnglish
Pages (from-to)5772-5776
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Issue number8
Publication statusPublished - 2010 Aug 1


  • BiNdFeO thin film
  • Dielectric properties
  • Ferroelectric properties
  • Sol-gel method

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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