Preparation of MgIn2O4-X thin films on glass infstrate by RF sputtering

Hiroshi Un’ No, Naoko Hikuma, Takahisa Omata, Naoyuki Ueda, Takuya Hashimoto, Hiroshi Kawazoe

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)

Abstract

MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H2 flow was 2.3ȕ102 S/cm, with a carrier concentration of 6.3ȕ1020 cm-3 and a mobility of 2.2 cm2 ƃV-1ƃs-1. No distinct optical absorption band was observed in the visible region.

Original languageEnglish
Pages (from-to)L1260-L1262
JournalJapanese journal of applied physics
Volume32
Issue number9
DOIs
Publication statusPublished - 1993 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Preparation of MgIn<sub>2</sub>O<sub>4-X</sub> thin films on glass infstrate by RF sputtering'. Together they form a unique fingerprint.

Cite this