TY - JOUR
T1 - Preparation of MgIn2O4-X thin films on glass infstrate by RF sputtering
AU - Un’ No, Hiroshi
AU - Hikuma, Naoko
AU - Omata, Takahisa
AU - Ueda, Naoyuki
AU - Hashimoto, Takuya
AU - Kawazoe, Hiroshi
PY - 1993/9
Y1 - 1993/9
N2 - MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H2 flow was 2.3ȕ102 S/cm, with a carrier concentration of 6.3ȕ1020 cm-3 and a mobility of 2.2 cm2 ƃV-1ƃs-1. No distinct optical absorption band was observed in the visible region.
AB - MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H2 flow was 2.3ȕ102 S/cm, with a carrier concentration of 6.3ȕ1020 cm-3 and a mobility of 2.2 cm2 ƃV-1ƃs-1. No distinct optical absorption band was observed in the visible region.
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U2 - 10.1143/JJAP.32.L1260
DO - 10.1143/JJAP.32.L1260
M3 - Article
AN - SCOPUS:0027667399
SN - 0021-4922
VL - 32
SP - L1260-L1262
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9
ER -