Preparation of low-threshold and high current rectifying heterojunction using B-doped diamond grown on Si-treated c-BN crystals

C. X. Wang, G. W. Yang, T. C. Zhang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao, G. T. Zou

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Low-threshold heterojunctions have been formed from a boron-doped p-type diamond layer grown epitaxially on the {1 1 1} surface of a Si-treated single crystalline cubic boron nitride. The resistivity of the Si-treated cubic boron nitride was 0.1 Ω cm. With the resistivity of 0.1 Ω cm, which is lower than that of the sample prepared by conventional high-temperature and high-pressure method, the turn-on voltage and the highest current of the heterojunction are 0.5 V and 1 mA, respectively.

Original languageEnglish
Pages (from-to)1422-1425
Number of pages4
JournalDiamond and Related Materials
Volume12
Issue number8
DOIs
Publication statusPublished - 2003 Aug 1

Keywords

  • C-BN
  • Diamond film
  • Diode
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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