Preparation of Li-Al-O films by laser chemical vapor deposition

Chen Chi, Hirokazu Katsui, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Li-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (Tdep) of 800-1300 K and molar ratios of Li to Al precursors (RLi/Al) of 0.1-12. Single-phase α-LiAl5O8 films having faceted grains with pyramidal and polygonal shapes were obtained at Tdep = 1107-1280 K and R Li/Al = 0.1-2.9. Single-phase γ-LiAlO2 films having pyramidal grains were prepared at Tdep = 984-1238 K and R Li/Al = 0.9-10.6. Under the conditions of Tdep = 923 K and RLi/Al = 11.4, single-phase β-Li5AlO4 films with a fluffy morphology were deposited. The highest deposition rate of Li-Al-O films was 98 μm h-1 with a mixture of γ-LiAlO 2 and β-Li5AlO4 at Tdep = 944 K.

Original languageEnglish
Pages (from-to)1338-1343
Number of pages6
JournalMaterials Chemistry and Physics
Issue number3
Publication statusPublished - 2014 Feb 14


  • Chemical vapour deposition (CVD)
  • Composite materials
  • Crystal structure
  • Microstructure
  • Oxides

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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