Abstract
A low-temperature synthetic method for preparing lead zirconate titanate (PZT) perovskite film on a Pt substrate is proposed. The method consists of the self-assembly of PZT particles on a substrate and successive spin coating with a precursor of PZT. The PZT particles that had sub-micron sizes and perovskite structures were prepared by annealing amorphous PZT particles formed from a complex alkoxide precursor. The PZT particles were deposited on a Pt substrate that was surface-modified with (3-mercaptopropyl) trimethoxysilane to chemically fix the particles on the substrate. Another PZT precursor solution was used for the spin-coating on the PZT-deposited substrate, and then the spin-coated film was annealed at 350°C to remove organic residues left in the film. The spin-coated PZT film prepared at 350°C had a dielectric constant of 118 at a frequency of 1000 Hz.
| Original language | English |
|---|---|
| Pages (from-to) | 264-269 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 457 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Jun 15 |
Keywords
- Adsorption
- Crystallization
- Deposition process
- Dielectric properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry