Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation

Zhan Jie Wang; Isao Karibe; Ryutaro Maeda; Hiroyuki Kokawa

Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation

Zhan Jie Wang, Isao Karibe, Ryutaro Maeda, Hiroyuki Kokawa

ENG - Materials Processing

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Thin films of Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO₂/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

Original language	English
Pages (from-to)	3108-3110
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	85
Issue number	12
Publication status	Published - 2002 Dec 1

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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title = "Preparation of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and laser ablation",

abstract = "Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.",

author = "Wang, {Zhan Jie} and Isao Karibe and Ryutaro Maeda and Hiroyuki Kokawa",

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T1 - Preparation of lead zirconate titanate thin films derived by hybrid processing

T2 - Sol-gel method and laser ablation

AU - Wang, Zhan Jie

AU - Karibe, Isao

AU - Maeda, Ryutaro

AU - Kokawa, Hiroyuki

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

AB - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.

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