Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering

Hiroshi Masumoto; Stéphane Hiboux; Paul Muralt

doi:10.1080/00150199908009143

Preparation of La_1-xSr_xCoO₃ electrodes for ferroelectric thin films by RF magnetron sputtering

Hiroshi Masumoto, Stéphane Hiboux, Paul Muralt

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO₂/SiO₂/Si, TiO₂/Pt/TiO₂/SiO₂/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600°C, yielding a specific resistivity of 90 μΩcm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d₃₃ coefficient was 73.5 pm/V.

Original language	English
Pages (from-to)	335-341
Number of pages	7
Journal	Ferroelectrics
Volume	225
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199908009143
Publication status	Published - 1999 Jan 1
Externally published	Yes

Keywords

Electrodes
LaSrCoO
PZT
RF magnetron sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering",

abstract = "(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600°C, yielding a specific resistivity of 90 μΩcm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d33 coefficient was 73.5 pm/V.",

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author = "Hiroshi Masumoto and St{\'e}phane Hiboux and Paul Muralt",

year = "1999",

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TY - JOUR

T1 - Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering

AU - Masumoto, Hiroshi

AU - Hiboux, Stéphane

AU - Muralt, Paul

PY - 1999/1/1

Y1 - 1999/1/1

N2 - (100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600°C, yielding a specific resistivity of 90 μΩcm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d33 coefficient was 73.5 pm/V.

AB - (100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600°C, yielding a specific resistivity of 90 μΩcm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d33 coefficient was 73.5 pm/V.

KW - Electrodes

KW - LaSrCoO

KW - PZT

KW - RF magnetron sputtering

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