Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition

Masanori Kimura; Akihiko Ito; Teiichi Kimura; Takashi Goto

doi:10.1016/j.tsf.2011.09.007

Preparation of LaRuO ₃ films by microwave plasma-enhanced chemical vapor deposition

Masanori Kimura, Akihiko Ito, Teiichi Kimura, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Abstract LaRuO ₃ films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R _La/Ru) and microwave power (P _M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R _La/Ru < 1.0, RuO ₂ films were obtained independent of P _M. At R _La/Ru = 1.6-3.2 and P _M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO ₃ single phase films were prepared. A product mixture of La ₂RuO ₅ and β-La ₃RuO ₇ was obtained at R _La/Ru = 4 and P _M = 1.2 kW, while a mixture of RuO ₂ and La _4.87Ru ₂O ₁₂ was formed at R _La/Ru = 4.6 and P _M = 0.6 kW. LaRuO ₃ single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 ⁴ S m ^{- 1} at room temperature.

Original language	English
Pages (from-to)	1847-1850
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2011.09.007
Publication status	Published - 2012 Jan 1

Keywords

Electrical conductivity
Keyword
Lanthanum ruthenate
Microstructure
Plasma-enhanced chemical vapor deposition
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.09.007

Cite this

@article{8199214f8cc74fcdb112132d5f9961aa,

title = "Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition",

abstract = "Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.",

keywords = "Electrical conductivity, Keyword, Lanthanum ruthenate, Microstructure, Plasma-enhanced chemical vapor deposition, Thin films",

author = "Masanori Kimura and Akihiko Ito and Teiichi Kimura and Takashi Goto",

note = "Funding Information: This research was supported in part by the Global COE Program of Materials Integration, Tohoku University . This research was also financially supported in part by Furuya Metal Co., Ltd. and Lonmin Plc.",

year = "2012",

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doi = "10.1016/j.tsf.2011.09.007",

language = "English",

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T1 - Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition

AU - Kimura, Masanori

AU - Ito, Akihiko

AU - Kimura, Teiichi

AU - Goto, Takashi

N1 - Funding Information: This research was supported in part by the Global COE Program of Materials Integration, Tohoku University . This research was also financially supported in part by Furuya Metal Co., Ltd. and Lonmin Plc.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.

AB - Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.

KW - Electrical conductivity

KW - Keyword

KW - Lanthanum ruthenate

KW - Microstructure

KW - Plasma-enhanced chemical vapor deposition

KW - Thin films

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