Abstract
Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.
Original language | English |
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Pages (from-to) | 1847-1850 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Jan 1 |
Keywords
- Electrical conductivity
- Keyword
- Lanthanum ruthenate
- Microstructure
- Plasma-enhanced chemical vapor deposition
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry