Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition

Masanori Kimura; Akihiko Ito; Teiichi Kimura; Takashi Goto

doi:10.1016/j.tsf.2011.09.007

Preparation of LaRuO ₃ films by microwave plasma-enhanced chemical vapor deposition

Masanori Kimura, Akihiko Ito, Teiichi Kimura, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Abstract LaRuO ₃ films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R _La/Ru) and microwave power (P _M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R _La/Ru < 1.0, RuO ₂ films were obtained independent of P _M. At R _La/Ru = 1.6-3.2 and P _M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO ₃ single phase films were prepared. A product mixture of La ₂RuO ₅ and β-La ₃RuO ₇ was obtained at R _La/Ru = 4 and P _M = 1.2 kW, while a mixture of RuO ₂ and La _4.87Ru ₂O ₁₂ was formed at R _La/Ru = 4.6 and P _M = 0.6 kW. LaRuO ₃ single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 ⁴ S m ^{- 1} at room temperature.

Original language	English
Pages (from-to)	1847-1850
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2011.09.007
Publication status	Published - 2012 Jan 1

Keywords

Electrical conductivity
Keyword
Lanthanum ruthenate
Microstructure
Plasma-enhanced chemical vapor deposition
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition",

abstract = "Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.",

keywords = "Electrical conductivity, Keyword, Lanthanum ruthenate, Microstructure, Plasma-enhanced chemical vapor deposition, Thin films",

author = "Masanori Kimura and Akihiko Ito and Teiichi Kimura and Takashi Goto",

year = "2012",

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doi = "10.1016/j.tsf.2011.09.007",

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T1 - Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition

AU - Kimura, Masanori

AU - Ito, Akihiko

AU - Kimura, Teiichi

AU - Goto, Takashi

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.

AB - Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.

KW - Electrical conductivity

KW - Keyword

KW - Lanthanum ruthenate

KW - Microstructure

KW - Plasma-enhanced chemical vapor deposition

KW - Thin films

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