Preparation of LaRuO 3 films by microwave plasma-enhanced chemical vapor deposition

Masanori Kimura, Akihiko Ito, Teiichi Kimura, Takashi Goto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Abstract LaRuO 3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru < 1.0, RuO 2 films were obtained independent of P M. At R La/Ru = 1.6-3.2 and P M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO 3 single phase films were prepared. A product mixture of La 2RuO 5 and β-La 3RuO 7 was obtained at R La/Ru = 4 and P M = 1.2 kW, while a mixture of RuO 2 and La 4.87Ru 2O 12 was formed at R La/Ru = 4.6 and P M = 0.6 kW. LaRuO 3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 × 10 4 S m - 1 at room temperature.

Original languageEnglish
Pages (from-to)1847-1850
Number of pages4
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - 2012 Jan 1

Keywords

  • Electrical conductivity
  • Keyword
  • Lanthanum ruthenate
  • Microstructure
  • Plasma-enhanced chemical vapor deposition
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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