Preparation of IrO2 thin films by oxidating laser-ablated Ir

Yuxue Liu; Hiroshi Masumoto; Takashi Goto

doi:10.2320/matertrans.45.900

Preparation of IrO₂ thin films by oxidating laser-ablated Ir

Yuxue Liu, Hiroshi Masumoto, Takashi Goto

Advanced Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Highly conductive and transparent IrO₂ thin films were prepared on SiO₂ substrates by embedding laser-ablated Ir thin films in IrO₂ powders at 973 K for 10.8ks in O₂. The binding energies of Ir 4f_7/2 for the as-deposited Ir and the IrO₂ thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f_7/2 binding energy implied the oxidation from Ir to IrO₂. The resistivity of the IrO₂ thin films at room temperature was 4.0 × 10^-7 Ωm. The optical transmittance of IrO₂ thin films can reach to 60-80% in the wavelength range of 400-800 nm.

Original language	English
Pages (from-to)	900-903
Number of pages	4
Journal	Materials Transactions
Volume	45
Issue number	3
DOIs	https://doi.org/10.2320/matertrans.45.900
Publication status	Published - 2004 Mar

Keywords

Glancing angle incidence X-ray diffraction
IrO thin films
Laser ablation
Optical transmittance
Resistivity
X-ray photoelectron spectra

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.2320/matertrans.45.900

Cite this

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title = "Preparation of IrO2 thin films by oxidating laser-ablated Ir",

abstract = "Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.",

keywords = "Glancing angle incidence X-ray diffraction, IrO thin films, Laser ablation, Optical transmittance, Resistivity, X-ray photoelectron spectra",

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AU - Liu, Yuxue

AU - Masumoto, Hiroshi

AU - Goto, Takashi

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N2 - Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.

AB - Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.

KW - Glancing angle incidence X-ray diffraction

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KW - Optical transmittance

KW - Resistivity

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