Preparation of IrO2 thin films by oxidating laser-ablated Ir

Yuxue Liu; Hiroshi Masumoto; Takashi Goto

doi:10.2320/matertrans.45.900

Preparation of IrO₂ thin films by oxidating laser-ablated Ir

Yuxue Liu, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Highly conductive and transparent IrO₂ thin films were prepared on SiO₂ substrates by embedding laser-ablated Ir thin films in IrO₂ powders at 973 K for 10.8ks in O₂. The binding energies of Ir 4f_7/2 for the as-deposited Ir and the IrO₂ thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f_7/2 binding energy implied the oxidation from Ir to IrO₂. The resistivity of the IrO₂ thin films at room temperature was 4.0 × 10^-7 Ωm. The optical transmittance of IrO₂ thin films can reach to 60-80% in the wavelength range of 400-800 nm.

Original language	English
Pages (from-to)	900-903
Number of pages	4
Journal	Materials Transactions
Volume	45
Issue number	3
DOIs	https://doi.org/10.2320/matertrans.45.900
Publication status	Published - 2004 Mar

Keywords

Glancing angle incidence X-ray diffraction
IrO thin films
Laser ablation
Optical transmittance
Resistivity
X-ray photoelectron spectra

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.2320/matertrans.45.900

Fingerprint Dive into the research topics of 'Preparation of IrO<sub>2</sub> thin films by oxidating laser-ablated Ir'. Together they form a unique fingerprint.

Cite this

@article{77ff52634a894390a61c9026bec84e3e,

title = "Preparation of IrO2 thin films by oxidating laser-ablated Ir",

abstract = "Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.",

keywords = "Glancing angle incidence X-ray diffraction, IrO thin films, Laser ablation, Optical transmittance, Resistivity, X-ray photoelectron spectra",

author = "Yuxue Liu and Hiroshi Masumoto and Takashi Goto",

year = "2004",

month = mar,

doi = "10.2320/matertrans.45.900",

language = "English",

volume = "45",

pages = "900--903",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "3",

}

TY - JOUR

T1 - Preparation of IrO2 thin films by oxidating laser-ablated Ir

AU - Liu, Yuxue

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2004/3

Y1 - 2004/3

N2 - Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.

AB - Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.

KW - Glancing angle incidence X-ray diffraction

KW - IrO thin films

KW - Laser ablation

KW - Optical transmittance

KW - Resistivity

KW - X-ray photoelectron spectra

UR - http://www.scopus.com/inward/record.url?scp=2442581315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442581315&partnerID=8YFLogxK

U2 - 10.2320/matertrans.45.900

DO - 10.2320/matertrans.45.900

M3 - Article

AN - SCOPUS:2442581315

VL - 45

SP - 900

EP - 903

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 3

ER -