Preparation of Iridium Films by MOCVD and Their Application for Oxygen Gas Sensors

T. Goto, T. Ono, T. Hirai

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Iridium films were prepared by metalorganic chemical vapor deposition (MOCVD) on zirconia solid electrolyte substrates using iridium acetylacetonate as a precursor. The films prepared without oxygen gas addition were black and contained 35 to 70 vol % amorphous carbon surrounding iridium grains 1 to 3 nm in diameter. The Ir-C films showed excellent electrical and catalytic properties for ZrO2 as a reversible electrode at temperatures below 800 K. The impedance associated with the ZrO2/Ir-C interface was about 3 to 5 times smaller than that of commercial platinum electrodes at 773 K. By adding a small amount of oxygen gas in the source gas, the carbon content of the films was decreased significantly, with accompanying grain growth of Ir and degradation of electrical performance. The output current of Ir-C films containing a small amount of carbon (about 1 wt % C) still was four times greater than that of commercial electrodes at 773 K.

Original languageEnglish
Pages (from-to)1017-1021
Number of pages5
JournalInorganic Materials
Volume33
Issue number10
Publication statusPublished - 1997 Oct 1

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Inorganic Chemistry
  • Metals and Alloys
  • Materials Chemistry

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