TY - JOUR
T1 - Preparation of highly-oriented Co2MnSi films on a non-single-crystalline substrate using a titanium-nitride buffer layer
AU - Sugihara, Atsushi
AU - Sakuraba, Yuya
AU - Yakushiji, Kay
AU - Yuasa, Shinji
AU - Takanashi, Koki
PY - 2011/2/1
Y1 - 2011/2/1
N2 - Highly-oriented titanium-nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium-nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co 2MnSi.
AB - Highly-oriented titanium-nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium-nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co 2MnSi.
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U2 - 10.1143/JJAP.50.028001
DO - 10.1143/JJAP.50.028001
M3 - Article
AN - SCOPUS:79951930905
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
M1 - 028001
ER -