Preparation of highly-oriented Co2MnSi films on a non-single-crystalline substrate using a titanium-nitride buffer layer

Atsushi Sugihara, Yuya Sakuraba, Kay Yakushiji, Shinji Yuasa, Koki Takanashi

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1 Citation (Scopus)

Abstract

Highly-oriented titanium-nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium-nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co 2MnSi.

Original languageEnglish
Article number028001
JournalJapanese journal of applied physics
Volume50
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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