Abstract
Highly-oriented titanium-nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium-nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co 2MnSi.
| Original language | English |
|---|---|
| Article number | 028001 |
| Journal | Japanese journal of applied physics |
| Volume | 50 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Sugihara, A., Sakuraba, Y., Yakushiji, K., Yuasa, S., & Takanashi, K. (2011). Preparation of highly-oriented Co2MnSi films on a non-single-crystalline substrate using a titanium-nitride buffer layer. Japanese journal of applied physics, 50(2), [028001]. https://doi.org/10.1143/JJAP.50.028001