Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex

Hideaki Zama, Shunri Oda, Takayuki Miyake, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    We have obtained high-quality copper films by photo-assisted chemical vapor deposition using β-diketonate complex as a starting material. The thermal activation energy of the deposition rate with UV-irradiation is smaller than that without UV-irradiation, because of photo-assisted decomposition. Copper films prepared at a substrate temperature of 350°C with UV-irradiation are highly (111)-oriented with an electrical resistivity of 1.7 µΩ·cm, as low as the value of bulk copper. Surface morphology is smooth, because the growing surface has high nuclei density.

    Original languageEnglish
    Pages (from-to)L588-L590
    JournalJapanese journal of applied physics
    Volume31
    Issue number5
    DOIs
    Publication statusPublished - 1992 May

    Keywords

    • (111)-oriented films
    • Chemical vapor deposition (CVD)
    • Copper films
    • Photo-assisted CVD
    • Surface morphology
    • β-diketonate complex

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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