TY - JOUR
T1 - Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
AU - Zama, Hideaki
AU - Oda, Shunri
AU - Miyake, Takayuki
AU - Hattori, Takeo
PY - 1992/5
Y1 - 1992/5
N2 - We have obtained high-quality copper films by photo-assisted chemical vapor deposition using β-diketonate complex as a starting material. The thermal activation energy of the deposition rate with UV-irradiation is smaller than that without UV-irradiation, because of photo-assisted decomposition. Copper films prepared at a substrate temperature of 350°C with UV-irradiation are highly (111)-oriented with an electrical resistivity of 1.7 µΩ·cm, as low as the value of bulk copper. Surface morphology is smooth, because the growing surface has high nuclei density.
AB - We have obtained high-quality copper films by photo-assisted chemical vapor deposition using β-diketonate complex as a starting material. The thermal activation energy of the deposition rate with UV-irradiation is smaller than that without UV-irradiation, because of photo-assisted decomposition. Copper films prepared at a substrate temperature of 350°C with UV-irradiation are highly (111)-oriented with an electrical resistivity of 1.7 µΩ·cm, as low as the value of bulk copper. Surface morphology is smooth, because the growing surface has high nuclei density.
KW - (111)-oriented films
KW - Chemical vapor deposition (CVD)
KW - Copper films
KW - Photo-assisted CVD
KW - Surface morphology
KW - β-diketonate complex
UR - http://www.scopus.com/inward/record.url?scp=0026868602&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026868602&partnerID=8YFLogxK
U2 - 10.1143/JJAP.31.L588
DO - 10.1143/JJAP.31.L588
M3 - Article
AN - SCOPUS:0026868602
VL - 31
SP - L588-L590
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
ER -