Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition

Hong Cheng, Rong Tu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Highly oriented β-SiC bulks with high hardness were fabricated by halide laser chemical vapor deposition (HLCVD) using SiCl4, CH4 and H2 as precursors. The effects of total pressure (Ptot) and deposition temperature (Tdep) on the preferred orientation, microstructure, deposition rate (Rdep) and micro-hardness were investigated. The 〈110〉-oriented β-SiC bulks were obtained at low Ptot (2–4 kPa), non-oriented β-SiC bulks were obtained at mediate Ptot (6 kPa), and 〈111〉-oriented β-SiC bulks were obtained at high Ptot (10–40 kPa), exhibiting faceted, cauliflower-like and six-fold pyramid-like microstructure, respectively. The maximum Rdep of 〈111〉- and 〈110〉-oriented β-SiC bulks were 3600 and 1300 μm/h at, respectively. The activation energy obtained by the plot of lgRdep-Tdep−1 is 170 to 280 kJ mol−1, showing an exponential relation with PSiThe Vickers micro-hardness of β-SiC bulks increased with increasing Ptot and showed the highest value of 35 GPa at Ptot = 40 kPa with a complete 〈111〉 orientation.

Original languageEnglish
Pages (from-to)509-515
Number of pages7
JournalJournal of the European Ceramic Society
Volume37
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Keywords

  • Deposition rate (R)
  • Halide laser CVD (HLCVD)
  • Microstructure
  • Preferred orientation
  • β-SiC

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this